sot-363 plastic-encapsulate diode switching diode features z fast switching speed z ultra-small surface mount package z for general purpose sw itching applications z high conductance making: kjg maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v forward continuous current i fm 300 ma average rectified output current i o 150 ma non-repetitive peak forward surge current @ t = 1.0s @ t = 1.0s i fsm 2 1 a power dissipation p d 200 mw thermal resistance junction to ambient air r ja 625 /w operating junction temperature t j 150 storage temperature t stg -5 5-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) r i r = 2.5a 75 v reverse voltage leakage current i r v r =75v v r =20v 2.5 0.025 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv junction capacitance c t v r =0, f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma,i rr =0.1i r, r l =100 ? 4 ns sot-363 2012-1 willas electronic corp. z BAV99DW z
typical characteristics 2012-1 willas electronic corp. sot-363 plastic-encapsulate diode BAV99DW
outline drawing dimensions in inches and (millimeters) sot-363 rev.d .056(1.40) .047(1.20) .096(2.45) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) 2012-1 willas electronic corp. sot-363 plastic-encapsulate diode BAV99DW
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